中压大电流SGT MOS-深圳市虹美功率半导体有限公司

产品列表

型号（Part Number）	工艺 (Technology)	封装（Package）	沟道（Polarity）	VDS(Max) BVDSS(V)	ID(Max) ID(A)	IDM	VTH (Typ)	VGS	RDS(ON) @-10VTyp (mΩ)	RDS(ON) @-4.5VTyp (mΩ)	RDS(ON) @-2.5VTyp (mΩ)	直接替代型号（compatible）
Reset	SGT工艺 (Split Gate) SGT工艺(Split Gate) SGT工艺 (Split Gate) Reset	DFN3X3-8L DFN5X6-8L TO-220 TO-220/TO-252 TO-247 TO-252 TO-263 Reset	N N沟道 P沟道 Reset	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK

HMS60N06Q	SGT工艺 (Split Gate)	DFN3X3-8L	N	60.00V	240.00A	60.00A	1.65V	20.00V	4.40mΩ	6.40mΩ	0.00mΩ	AON6248/AON6266
HMS50N06K	SGT工艺 (Split Gate)	TO-252	N沟道	60.00V	50.00A	200.00A	1.80V	20.00V	6.50mΩ	7.50mΩ	0.00mΩ	STP50N06/IRFZ44N/SUD50N06/FQP50N06 SSF6808/AP50N06/PHD50N06/FTD50N06
HMS3205K	SGT工艺 (Split Gate)	TO-252	N沟道	60.00V	120.00A	480.00A	1.70V	20.00V	3.50mΩ	4.00mΩ	0.00mΩ	IRF3205/DFP3205/MXP6008/RU3205/SSF5508/KIA3205/JCS3205C/RU6099/MT3205/UF3205/YR3205/JCS110N05/IRF3203/WFP3205
HMS40N10KA	SGT工艺 (Split Gate)	TO-252	N沟道	100.00V	40.00A	120.00A	1.50V	20.00V	12.00mΩ	16.00mΩ	0.00mΩ	AOT414/AOT416/IRF1310/MTB40N10/RFP40N10/MTP40N10/SUD40N10/SUP40N10
HMS35N06Q	SGT工艺 (Split Gate)	DFN3X3-8L	N沟道	60.00V	35.00A	105.00A	1.60V	20.00V	9.10mΩ	12.00mΩ	0.00mΩ	AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS85N08K	SGT工艺 (Split Gate)	TO-252	N沟道	80.00V	85.00A	255.00A	3.00V	20.00V	6.80mΩ	7.80mΩ	0.00mΩ
HMS18N10Q	SGT工艺 (Split Gate)	DFN3X3-8L	N沟道	100.00V	18.00A	72.00A	1.80V	20.00V	20.00mΩ	30.00mΩ	0.00mΩ	AON6484/AON6486AON7292/AON7296/AON7450
HMS35N10K	SGT工艺 (Split Gate)	TO-252	N沟道	100.00V	35.00A	105.00A	1.80V	20.00V	23.00mΩ	33.00mΩ	0.00mΩ	SUD40N10
HMS65N10KA	SGT工艺 (Split Gate)	TO-252	N沟道	100.00V	40.00A	120.00A	1.50V	20.00V	12.00mΩ	16.00mΩ	0.00mΩ	SUD40N10
HMS20N15KA	SGT工艺 (Split Gate)	TO-252	N沟道	150.00V	20.00A	80.00A	1.90V	20.00V	56.00mΩ	68.00mΩ	0.00mΩ	AOD254/AOD256/AOD4454/AP20N15GH/IRFR24N15D/SUD15N15/SUD25N15/IRFR4615/IRFR18N15D