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深圳市虹美功率半导体有限公司

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中压大电流SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS50N06K SGT工艺
(Split Gate)
TO-252 N沟道 60.00V 50.00A 200.00A 1.80V 20.00V 6.50mΩ 7.50mΩ 0.00mΩ STP50N06/IRFZ44N/SUD50N06/FQP50N06 SSF6808/AP50N06/PHD50N06/FTD50N06
HMS3205K SGT工艺
(Split Gate)
TO-252 N沟道 60.00V 120.00A 480.00A 1.70V 20.00V 3.50mΩ 4.00mΩ 0.00mΩ IRF3205/DFP3205/MXP6008/RU3205/SSF5508/KIA3205/JCS3205C/RU6099/MT3205/UF3205/YR3205/JCS110N05/IRF3203/WFP3205
HMS40N10KA SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ AOT414/AOT416/IRF1310/MTB40N10/RFP40N10/MTP40N10/SUD40N10/SUP40N10
HMS85N08K SGT工艺
(Split Gate)
TO-252 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 7.80mΩ 0.00mΩ
HMS35N10K SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 35.00A 105.00A 1.80V 20.00V 23.00mΩ 33.00mΩ 0.00mΩ SUD40N10
HMS65N10KA SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ SUD40N10
HMS20N15KA SGT工艺
(Split Gate)
TO-252 N沟道 150.00V 20.00A 80.00A 1.90V 20.00V 56.00mΩ 68.00mΩ 0.00mΩ AOD254/AOD256/AOD4454/AP20N15GH/IRFR24N15D/SUD15N15/SUD25N15/IRFR4615/IRFR18N15D