| 型号（Part Number） | 工艺 (Technology) |
封装（Package） | 沟道（Polarity） | VDS(Max) BVDSS(V) |
ID(Max) ID(A) |
IDM | VTH (Typ) |
VGS | RDS(ON) @-10VTyp (mΩ) |
RDS(ON) @-4.5VTyp (mΩ) |
RDS(ON) @-2.5VTyp (mΩ) |
直接替代型号（compatible） |
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| HMS5N90I | 超结工艺 (Super-Junction) |
TO-252 | N沟道 | 900.00V | 5.00A | 15.00A | 3.50V | 30.00V | 1480.00mΩ | 0.00mΩ | 0.00mΩ | IPP90R1K2P6 |
| HMS10N80K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 800.00V | 10.00A | 30.00A | 30.00V | 30.00V | 580.00mΩ | 0.00mΩ | 0.00mΩ | IPP80R650P6/多层外延工艺，抗冲击性强 |
| HMS7N80K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 800.00V | 7.00A | 21.00A | 3.00V | 30.00V | 740.00mΩ | 0.00mΩ | 0.00mΩ | IPP80R900P6/多层外延工艺，抗冲击性强 |
| HMS5N80I | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 800.00V | 5.00A | 15.00A | 3.50V | 30.00V | 1050.00mΩ | 0.00mΩ | 0.00mΩ | IPP80R1K2P6/多层外延工艺，抗冲击性强 |
| HMS11N70K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 700.00V | 11.00A | 30.00A | 3.00V | 30.00V | 400.00mΩ | 0.00mΩ | 0.00mΩ | IPP70R450P6/IPP70R450C6/IPP70R450E6/IPP70R450E6/IPP70R450C6/多层外延工艺，抗冲击性强 |
| HMS15N70K | 超结工艺 (Super-Junction) |
TO-252 | N沟道 | 700.00V | 15.00A | 45.00A | 3.00V | 30.00V | 300.00mΩ | 0.00mΩ | 0.00mΩ | IPP70R340P6/IPP70R340C6/ IPP70R340E6/IPP70R340C6/ IPP70R340E6 |
| HMS8N70K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 700.00V | 8.00A | 24.00A | 3.00V | 30.00V | 520.00mΩ | 0.00mΩ | 0.00mΩ | IPP70R600/IPA70R60/多层外延工艺，抗冲击性强 |
| HMS5N70K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 700.00V | 5.00A | 15.00A | 3.00V | 30.00V | 955.00mΩ | 0.00mΩ | 0.00mΩ | IPP70R900/IPA70R900/多层外延工艺，抗冲击性强 |
| HMS3N70R | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 700.00V | 3.00A | 9.00A | 3.50V | 20.00V | 1.50mΩ | 0.00mΩ | 0.00mΩ | IPP70R1K5/多层外延工艺，抗冲击性强 |
| HMS15N65K | 超结工艺 (Super-Junction) |
TO-252 | N沟道 | 650.00V | 15.00A | 45.00A | 3.00V | 30.00V | 230.00mΩ | 0.00mΩ | 0.00mΩ | IPP65R225C7/IPA65R225C7 IPP65R280/IPA65R280 |
| HMS11N65K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 650.00V | 11.00A | 33.00A | 3.00V | 30.00V | 300.00mΩ | 0.00mΩ | 0.00mΩ | IPP65R380/IPA65R380/多层外延工艺，抗冲击性强 |
| HMS8N65K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 650.00V | 8.00A | 24.00A | 3.00V | 30.00V | 480.00mΩ | 0.00mΩ | 0.00mΩ | IPP65R600/IPA65R600/多层外延工艺，抗冲击性强 |
| HMS5N65K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 650.00V | 5.00A | 15.00A | 3.00V | 20.00V | 950.00mΩ | 0.00mΩ | 0.00mΩ | IPP65R900/LSC05N65/SGF900N65W3/多层外延工艺，抗冲击性强 |
| HMS3N65K | 超结工艺 (Super-Junction) |
TO-252 | N沟道/带ESD | 650.00V | 3.00A | 9.00A | 3.50V | 20.00V | 1.50mΩ | 0.00mΩ | 0.00mΩ | IPP65R1K5/多层外延工艺，抗冲击性强 |
| HMS10N50K | 超结工艺 (Super-Junction) |
TO-252 | N沟道 | 500.00V | 10.00A | 30.00A | 3.50V | 30.00V | 400.00mΩ | 0.00mΩ | 0.00mΩ | IPP50R400P6/IPP50R400C6/IPP50R400E6/IPP50R400E6/IPP50R400C6/ |
