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深圳市虹美功率半导体有限公司

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P沟道 低压MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HM4P10D 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -100.00V -4.00A -12.00A -1.40V -20.00V 210.00mΩ 225.00mΩ 0.00mΩ
HM09P12D 沟槽工艺(Trench) DFN2X2-6L P沟道 -12.00V -9.00A -27.00A -0.60V -12.00V 0.00mΩ 17.00mΩ 24.00mΩ
HM16P12D 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -12.00V -16.00A -65.00A -0.70V -12.00V 0.00mΩ 11.50mΩ 14.00mΩ AON2701/AON2401/3/5/IRLHS2242
HM2305D 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -20.00V -8.00A -32.00A -0.70V -12.00V 0.00mΩ 39.00mΩ 58.00mΩ AON2405/AON2407/AON2409
HM3401DR 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -30.00V -6.00A -30.00A -1.00V -12.00V 50.00mΩ 64.00mΩ 95.00mΩ
HM2319D 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -40.00V -7.00A -21.00A -1.50V -20.00V 73.00mΩ 98.00mΩ 0.00mΩ
HM2309DR 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -60.00V -4.00A -16.00A -1.80V -20.00V 188.00mΩ 266.00mΩ 0.00mΩ
HM4P10D 沟槽工艺
(Trench)
DFN2X2-6L P沟道 -100.00V -4.00A -12.00A -1.40V -20.00V 210.00mΩ 225.00mΩ 0.00mΩ